Non-volatile memory device

US8213239B2 · kind B2 · utility

Assignee

• NOVATRANS GROUP SA · CH

Inventors

• Erez Halahmi · Netanya, IL
• Gilad Diamant · Haifa, IL
• Tamar Ravon · Tel Aviv-Yafo, IL
• Nery Ben-Azar · Yehud Monosson, IL
• Jeffrey Levy · Afula, IL
• Ron Naaman · Yarkona, IL

Key dates

• Filing date: Aug 17, 2006
• Grant date: Jul 3, 2012
• Expiry date: Dec 21, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0411
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

An electronic memory device includes at least one basic unit, which is configured as a memory cell for storing at least one bit of information. The basic unit includes a vacuum cavity for free charge carriers propagation therethrough, a region of charge carriers emission or entry into the vacuum cavity, an anode electrode which are kept under controllable voltage conditions, and at least one floating gate electrode accommodated in a path of the free charge carriers propagating through the vacuum cavity between the emission or entry region and the anode. The floating gate electrode serves for storing therein a charge indicative of the at least one bit of information.