Semiconductor memory device having improved local input/output line precharge scheme
US8213248B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2010 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Jan 1, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4096
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data path circuit of a semiconductor memory device includes: a bit line sense amplifier driven by a first power supply voltage; a local input/output line sense amplifier; a column selecting unit operatively connecting a pair of bit lines connected to the bit line sense amplifier and a pair of local input/output lines connected to the local input/output line sense amplifier in response to a column selection signal; and a local input/output line precharge unit precharging the pair of local input/output lines with a second power supply voltage different from the first power supply voltage during a period for which the column selection signal is in an inactive state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.