Intra-cavity frequency doubled microchip laser operating in TEM00 transverse mode
US8213470B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2010 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Nov 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1673
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for making a microchip laser includes preparing a laser-cavity chip assembly comprising a gain media, a first substantially flat surface, and a second substantially flat surface parallel to the first substantially flat surface. The method also includes forming a first reflective film on the first substantially flat surface to form a first cavity mirror, forming a second reflective film on the second substantially flat surface to form a second cavity mirror, and patterning at least one of the first reflective film or the second reflective film by removing at least a portion of the reflective film in the outer portion to form a center reflective portion in the one of the first reflective film or the second reflective film. The first cavity mirror and the second cavity mirror can suppress higher order transverse modes and produce a single TEM00 mode in the lasing light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.