High power diode laser having multiple emitters and method for its production
US8213479B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2007 |
| Grant date | Jul 3, 2012 |
| Priority date | — |
| Expiry date | Mar 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4012
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention discloses a high power laser diode comprising a plurality of laser light emitters (2) and a plurality of light collimating means (33), wherein each of the laser light emitters (2) defines, in a direction perpendicular to a direction of propagation (32) of an output laser beam, a fast axis (y) and a slow axis (x), and wherein each of the light collimating means is associated with a laser light emitter and configured for collimating the output laser beam at least in a fast axis (y) direction. In order to enable a simple and cost-efficient assembly of the diode laser with collimating means, having a layered structure consisting of a plurality of plane-parallel substrates. For this purpose, the diode laser comprises planar substrate means (10, 30) which serves to precisely define a distance between a respective laser light emitter (2) and an associated light collimating means to the order of one or several millimetres and to support the collimating means (33) such that the optical axis of said laser light emitters are parallel to each other and for defining a precise location of emitters on the planar substrate (10), preferably at predetermined distance in fast axis direc…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.