Methods for elimination or reduction of oxide and/or soot deposition in carbon containing layers
US8216639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2005 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Sep 9, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
One embodiment of the present invention provides a method for the deposition of a Carbon containing layer on a Silicon surface wherein a (i) substantially Silicon-oxide-free or reduced oxide interface results between Silicon and the Carbon containing layer during the deposition. In another embodiment, the present invention provides a method for deposition of a Carbon containing layer wherein the deposition process is substantially soot (particle)-free or reduction of soot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.