Method of manufacturing integrated circuit device with well controlled surface proximity
US8216906B2 · kind B2 · utility
16Cited by
11References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2010 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Oct 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a lightly doped source and drain (LDD) region that acts as an etch stop. The LDD region may act as an etch stop during an etching process implemented to form a recess in the substrate that defines a source and drain region of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.