Extended drain transistor and method of manufacturing the same

US8216908B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Phillippe Meunier-Bellard · Steenokkerzeel, BE
• Anco Heringa · Eindhoven, NL

Key dates

• Filing date: Jun 19, 2008
• Grant date: Jul 10, 2012
• Expiry date: Mar 23, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/90

Abstract

An extended drain transistor (100) comprising a substrate (101), a gate (103) formed on the substrate (100), the gate (103) having a first side wall (104) and a second side wall (105) opposing the first side wall (104), an extended drain (106) implanted in a surface portion of the substrate (101) adjacent the second side wall (105) of the gate (103), a spacer (107) on the second side wall (105) of the gate (103), a source (108) implanted in a surface portion of the substrate (101) adjacent the first side wall (104) of the gate (103), and a drain (109) implanted in a surface portion of the substrate (101) adjacent the spacer (107) in such a manner that the extended drain (106) is arranged between the gate (103) and the drain (109).