Solid-state imaging apparatus
US8217330B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2010 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Jan 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
Abstract
An apparatus includes a pixel region having disposed therein in a matrix form a plurality of conversion components, an amplifier transistor which amplifies a signal from the plurality of conversion components, a reset transistor which sets the potential of an input portion of the amplifier transistor to a reset potential, and a select transistor which is connected in series to the amplifier transistor and selects and reads the amplified signal, and well contact regions which are provided within the pixel region. Each of the well contact regions is neighboring to a drain region of the reset transistor, and the drain region of the reset transistor has a lower impurity concentration than the impurity concentration in the source and drain regions of the select transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.