Photon tunneling light emitting diodes and methods
US8217399B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2009 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
Abstract
Embodiments described herein include LEDs that promote photon tunneling. One embodiment of an LED device can have a quantum well layer adapted to generate light having a wavelength, a p-doped alloy layer on a first side of the quantum well layer and an n-doped alloy layer on the other side of the quantum well layer. The device can also include an electrode electrically connected to the p-doped alloy layer and an electrode electrically connected to the n-doped alloy layer. According to one embodiment the thickness of the n-doped alloy layer is less than the wavelength of light generated by the quantum well layer to allow light generated by the quantum well layer to tunnel to the medium (e.g., air). In another embodiment, the entire layer structure can have a thickness that is less than the wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.