Field effect transistor and electric circuit

US8217432B2 · kind B2 · utility

Assignee

• PolyIC GmbH & Co. KG · DE

Inventors

• Andreas Ullmann · Zirndorf, DE
• Walter Fix · Fürth, DE

Key dates

• Filing date: Oct 4, 2007
• Grant date: Jul 10, 2012
• Expiry date: May 5, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/135

Abstract

The invention relates to a field effect transistor comprising at least one source electrode layer and at least one drain electrode layer arranged in the same plane, a semiconductor layer, an insulator layer and a gate electrode layer, wherein the gate electrode layer, as seen perpendicular to the plane of the at least one source electrode layer and the at least one drain electrode layer, only partly covers a channel arranged between the at least one source electrode layer and the at least one drain electrode layer.