One-transistor pixel array
US8217433B1 · kind B1 · utility
163Cited by
102References
20Claims
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Key dates
| Filing date | Mar 15, 2012 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Mar 15, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T436/25875
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
To reduce the pixel size to the smallest dimensions and simplest form of operation, a pixel may be formed by using only one ion sensitive field-effect transistor (ISFET). This one-transistor, or 1T, pixel can provide gain by converting the drain current to voltage in the column. Configurable pixels can be created to allow both common source read out as well as source follower read out. A plurality of the 1T pixels may form an array, having a number of rows and a number of columns and a column readout circuit in each column.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.