Backside controlled MEMS capacitive sensor and interface and method
US8217475B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2008 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Mar 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Described herein is the sense element assembly for a capacitive pressure sensor and method for creating same that has increased sensitivity despite the parasitic capacitance that is created. The capacitive sensor element assembly, comprises a first semiconductive layer, and a first conductive layer, a first dielectric layer into which a cavity has been formed, the dielectric layer lying between the first semiconductive layer and the first conductive layer, wherein an electrical connection is made to the second conductive layer. A preferred method for fabricating a capacitive sensor assembly of the present invention comprises the steps of forming a dielectric layer on top of a conductive handle wafer; creating at least one cavity in the dielectric layer, bonding a thin semiconductive layer to the dielectric layer and connecting an operational amplifier to the input of the capacitive sensor assembly to overcome the parasitic capacitance formed during fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.