Photosensitive semiconductor component

US8217483B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Kevin Fuechsel · Jena, DE
• Andreas Tuennermann · Jena, DE
• Ernst-Bernhard Kley · Jena, DE

Key dates

• Filing date: Nov 24, 2009
• Grant date: Jul 10, 2012
• Expiry date: Mar 3, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A semiconductor component that includes a photosensitive doped semiconductor layer, in which electrical charge carriers are released during absorption of electromagnetic radiation is disclosed. The photosensitive semiconductor layer has a structured interface and at least one layer which generates an electric field for separating the released charge carriers disposed downstream of the structured interface. The electric field extends over the structured interface. The photosensitive semiconductor component is distinguished by a high efficiency of the charge carrier separation, in particular, for generating an electric current.