Thin film transistor array panel and method of manufacturing the same
US8218110B2 · kind B2 · utility
4Cited by
2References
19Claims
0Family size
Assignee
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Key dates
| Filing date | May 4, 2009 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Oct 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6729
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
After increasing the thickness of a gate line and forming a barrier rib that is made of an organic material, a gate insulating layer is formed and then a color filter is formed with an Inkjet method using the barrier rib. By increasing a thickness of the gate line, even if the size of a substrate increases, problems due to signal delay are reduced, and by forming a barrier rib with an organic material, the height of the barrier rib increases, and a taper angle increases and thus a color filter is stably formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.