Magnetoresistive element and magnetic memory
US8218355B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2009 |
| Grant date | Jul 10, 2012 |
| Priority date | — |
| Expiry date | Jul 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ν is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer.|√{square root over (2)}×a1/2−a2|/a2<b×{ln (hc/b)+1}/{2π×hc×(1+ν)}.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.