Neuron MOS transistor based multi-digit multi-valued counter

US8218714B2 · kind B2 · utility

Assignee

• Ningbo University · CN

Inventors

• Peng Wang · San Diego, US
• Yue Zhang · Beijing, CN

Key dates

• Filing date: Dec 30, 2010
• Grant date: Jul 10, 2012
• Expiry date: Dec 30, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6892

Abstract

The present invention discloses a neuron MOS based multi-valued counter unit. The counter unit includes a neuron MOS source follower and at least a control gate connected the neuron MOS source follower. The control gate includes a first dual-value D flip-flop, a second dual-value D flip-flop, an AND gate, and an OR gate. The present invention utilizes the neuron MOS to replace the complicated threshold value operations of the multi-value logic. The current invention implements the true multi-value logic and a multi-base multi-value counter by increasing the number of the dual-value D flip-flop, and connecting the dual-value D flip-flop to the input control gate of the neuron MOS follower. Comparing to the conventional multi-value counter, the present invention reduces the necessary components in constructing the counter, and it also reduces the cost and power consumption. The present invention applies the asynchronous carry-over concept to implement the multi-digit multi-value counter, and it also has been verified by the simulation of P Simulation Program with Integrated Circuit Emphasis (SPICE).