Pressure sensor and manufacturing method
US8220338B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 6, 2010 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Aug 11, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/147
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor substrate, provided with a differential pressure diaphragm, and a glass pedestal, which is provided on the bottom side of the semiconductor substrate, are provided, wherein: the bottom surface of the semiconductor substrate and the top surface of the glass pedestal are bonded together; a pressure introducing hole is formed in the glass pedestal so as to pass through the glass pedestal, connecting between the top and bottom surfaces of the glass pedestal; the pressure introducing hole is formed with a first diameter for the pressure introducing hole at the bottom surface of the glass pedestal from the bottom surface of the glass pedestal to a first position; and a second diameter for the pressure introducing hole at the top surface of the glass pedestal is larger than the first diameter; where a metal thin film layer is deposited on the bottom surface of the glass pedestal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.