CMP apparatus and method of polishing wafer using CMP
US8221191B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 30, 2008 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Jun 18, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B53/017
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A CMP apparatus is provided with a polishing pad, a film thickness sensor for measuring a thickness of a film being polished on a wafer via the polishing pad, a polishing pad thickness measuring unit for measuring the thickness of the polishing pad, a dresser for dressing the polishing pad, and a polishing control unit for switching polishing conditions in response to a fact that an output value from the film thickness sensor has exceeded a threshold value. The polishing control unit has a memory unit for storing a threshold value corresponding to the thickness of the polishing pad after dressing when the polishing pad is dressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.