Diamond semiconductor element and process for producing the same
US8221548B2 · kind B2 · utility
1Cited by
36References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2008 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Sep 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a diamond thin-film includes forming a diamond crystal thin-film on a substrate and firing the diamond crystal thin-film at a sufficient temperature under high pressure under which a diamond is stable. A diamond single-crystal substrate having a diamond single-crystal thin-film formed thereon is placed in an ultra-high-pressure and high-temperature firing furnace to anneal the diamond single-crystal thin-film under the conditions of 1200° C. and 6 GPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.