Method for manufacturing semiconductor device
US8222097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2009 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Apr 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object to form a conductive region between a front surface and a rear surface of an insulating film without forming contact holes in the insulating film. A method for manufacturing a semiconductor device is provided, in which an insulating film is formed over a semiconductor element and a first electrode electrically connected to the semiconductor element which are over a substrate, a first region having many defects is formed at a first depth in the insulating film by adding first ions into the insulating film at a first accelerating voltage; a second region having many defects is formed at a second depth which is different from the first depth in the insulating film by adding second ions into the insulating film at a second accelerating voltage which is different from the first accelerating voltage, a conductive material containing a metal element is formed over the first and second regions having many defects; and a conductive region which electrically connects the first electrode and the conductive material containing the metal element is formed in the insulating film by diffusing the metal element from the upper region to the lower region of the first and second regio…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.