Method of forming nonvolatile memory device
US8222122B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2010 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Aug 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
Abstract
Provided is a method of forming a nonvolatile memory device. The method may include alternatingly stacking n number of dielectric layers and n number of conductive layers on a substrate, forming a non-photosensitive pattern on the alternatingly stacked dielectric layers and conductive layers, etching the i-th conductive layer and i-th dielectric (2≦i≦n, i is a natural number indicating a stacking order of the conductive layers and the dielectric layers) by using the non-photosensitive pattern as an etch mask, laterally etching a sidewall of the non-photosensitive pattern and etching the i-th conductive layer, (i−1)-th conductive layer, i-th dielectric layer and (i−1)-th dielectric layer by using the etched non-photosensitive pattern as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.