Method for introducing impurities and apparatus for introducing impurities
US8222128B2 · kind B2 · utility
103Cited by
28References
8Claims
0Family size
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Key dates
| Filing date | Mar 5, 2010 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Mar 5, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.