Methods of forming an image sensor
US8222131B2 · kind B2 · utility
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1References
18Claims
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Key dates
| Filing date | Dec 28, 2009 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Jan 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
Provided is a method of forming an image sensor. The method may include providing a single crystalline semiconductor layer including at least one photodiode onto a support substrate; forming a material layer including dopants on the single crystalline semiconductor layer; and forming a dopant diffusion layer in the single crystalline semiconductor layer by diffusing the dopants of the material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.