Semiconductor memory device, method of manufacturing the same, and method of screening the same
US8222626B2 · kind B2 · utility
2Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2010 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Oct 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes first and second memory cells each including a variable resistance element and a diode and having a pillar shape, and an insulating layer provided between the first memory cell and the second memory cell and including a void. A central portion of the diode has a smaller width than widths of upper and lower portions of the diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.