Field-effect type transistor having two gate electrodes and display element using the same
US8222642B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 16, 2008 |
| Grant date | Jul 17, 2012 |
| Priority date | — |
| Expiry date | Jan 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A field-effect type transistor has: a source electrode; a drain electrode being a metal electrode; a semiconductor layer provided to be in contact with both of the source electrode and the drain electrode; and a gate electrode provided to face at least a part of the semiconductor layer. The gate electrode has: a first gate electrode; and a second gate electrode provided closer to the drain electrode than the first gate electrode is. The second gate electrode is so connected as to have a same potential as the drain electrode and is electrically isolated from the first gate electrode. Consequently, in a display device, the off-leakage current is suppressed, and reduction in a pixel area and a bus interconnection width is suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.