Patent · US Active

Semiconductor component with integrated hall effect sensor

US8222679B2 · kind B2 · utility

3Cited by

3References

15Claims

0Family size

Assignee

X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE

Inventors

Thomas Uhlig · Dresden, DE
Felix Fuernhammer · Dresden, DE
Christoph Ellmers · Dresden, DE

Key dates

Filing date	Mar 26, 2008
Grant date	Jul 17, 2012
Priority date	—
Expiry date	Nov 3, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10N59/00
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A semiconductor device with an integrated circuit on a semiconductor substrate comprises a Hall effect sensor in a first active region and a lateral high voltage MOS transistor in a second active region. The semiconductor device of the present invention is characterized in that the structure of the integrated Hall effect sensor is strongly related with the structure of a high-voltage DMOS transistor. The integrated Hall effect sensor is in some features similar to a per se known high-voltage DMOS transistor having a double RESURF structure. The control contacts of the Hall effect sensor correspond to the source and drain contacts of the high-voltage DMOS transistor. The semiconductor device of the present invention allows a simplification of the process integration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.