Patent · US Active

Resonant device, communication module, communication device, and method for manufacturing resonant device

US8222970B2 · kind B2 · utility

8Cited by
6References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 15, 2009
Grant dateJul 17, 2012
Priority date
Expiry dateJun 23, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03H2003/023
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A resonant device includes first and second piezoelectric thin film resonators. The first piezoelectric thin film resonator includes a substrate, a first lower electrode formed on the substrate, a first piezoelectric film formed over the first lower electrode, and a first upper electrode formed on the piezoelectric film and opposed to the first lower electrode. The second piezoelectric thin film resonator includes a second lower electrode formed above the first upper electrode, a second piezoelectric film formed over the second lower electrode, and a second upper electrode formed on the piezoelectric film and opposed to the second lower electrode. The first membrane region in which the first lower electrode opposes to the first upper electrode through the first piezoelectric film and a second membrane region in which the second lower electrode opposes to the second upper electrode through the second piezoelectric film are laminated through a second cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.