Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas
US8226920B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 7, 2011 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Jan 7, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2219/00006
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The invention concern an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention feeds Ar gas in a trichlorosilane line, which connects a trichlorosilane (TCS) tank and a series of distillation units. The distillation units have a pressure transducer and a pressure independent control valve (PIC-V) positioned on a vent gas line for discharging vent gas from the distillation units. Ar gas is fed to the TCS line with higher pressure than the pressure set for opening the PIC-V. The TCS is distilled by the distillation units with continuously discharging vent gas from the distillation units.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.