Dislocation site formation techniques
US8227020B1 · kind B1 · utility
4Cited by
10References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 31, 2008 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Feb 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/01
Abstract
Techniques to form dislocation cores along an interface of a multilayer thin film structure are described. The loading and/or deloading of isotopes of hydrogen are also described in association with core formation. The described techniques can provide be applied to superconductive structure formation, x-ray and charged particle generation, nuclear reaction processes, and/or inertial confinement fusion targets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.