Method of manufacturing piezoelectric thin film
US8227021B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 2, 2008 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Oct 3, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
There are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1−x)Lax(ZryTi1−y)O3 (where 0≦x<1, 0.05≦y≦1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.