Removal of impurities from semiconductor device layers
US8227299B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 1, 2009 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Jan 12, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing impurities from at least one semiconductor device layer during manufacturing of a semiconductor device is disclosed. The semiconductor device layer has a compound semiconductor material and/or germanium. Each heating process performed during the manufacturing of the semiconductor device after provision of the semiconductor device layer has a low thermal budget determined by temperatures equal to or lower than about 900° C. and time periods equal to or lower than about 5 minutes. In one aspect, the method includes providing a germanium gettering layer with a higher solubility for the impurities than the semiconductor device layer. The germanium gettering layer is provided at least partly in direct or indirect contact with the at least one semiconductor device layer, such that impurities can diffuse from the at least one semiconductor device layer to the germanium gettering layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.