Semiconductor device having metal wirings of laminated structure
US8227337B2 · kind B2 · utility
6Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2010 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Dec 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.