Thin film transistor
US8227799B2 · kind B2 · utility
8Cited by
4References
19Claims
0Family size
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Key dates
| Filing date | Dec 31, 2009 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Aug 14, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/75
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present disclosure provides a thin film transistor which includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The semiconducting layer is electrically connected with the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by the insulating layer. At least one of the gate electrode, the drain electrode, the source electrode includes a carbon nanotube composite layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.