Method for manufacturing thin film transistor (TFT) and OLED display having TFTS manufactured by the same
US8227808B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2008 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | May 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An organic light emitting diode (OLED) display and thin film transistor (TFT) manufacturing method thereof are disclosed. According to the present invention, poly-silicon layers for forming active areas of non-driving TFT (e.g. peripheral circuit TFT and switch TFT) and driving TFT used in the OLED display are respectively made by using standard laser crystallization method and non-laser crystallization method or low energy laser crystallization method. Therefore, the peripheral circuit TFT has excellent electrical performance such as high carrier mobility, while the OLED-driving TFT has good stability so that the resultant display can operate with improved luminance uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.