Semiconductor device having a plurality of spaced-apart field plates formed on a field insulating film
US8227868B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 31, 2011 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Feb 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device according to the present invention includes a semiconductor substrate of a first conductivity type having a top surface and a rear surface, a semiconductor layer of a second conductivity type formed on the top surface of the semiconductor substrate, having a top surface and a rear surface, and having the rear surface in contact with the top surface of the semiconductor substrate, a body region of the first conductivity type formed in a top layer portion of the semiconductor layer, a first impurity region of the second conductivity type formed in a top layer portion of the semiconductor layer and spaced apart from the body region, a second impurity region of the second conductivity type formed in a top layer portion of the body region and spaced apart from a peripheral edge of the body region, a gate electrode formed on the semiconductor layer and opposed to a portion between the peripheral edge of the body region and a peripheral edge of the second impurity region, a field insulating film formed in a portion of the top surface of the semiconductor layer between the body region and the first impurity region, and a plurality of field plates formed on the field …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.