Semiconductor device and manufacturing method thereof
US8227880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2010 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Mar 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To provide a semiconductor device capable of write operation to a selected magnetoresistive element without causing a malfunction of a non-selected magnetoresistive element and a manufacturing method of this semiconductor device. The semiconductor device includes a magnetic storage element having a magnetization free layer whose magnetization direction is made variable and formed over a lead interconnect and a digit line located below the magnetic storage element, extending in a first direction, and capable of changing the magnetization state of the magnetization free layer by the magnetic field generated. The digit line includes an interconnect body portion and a cladding layer covering therewith the bottom surface and the side surface of the interconnect body portion and opened upward. The cladding layer includes a sidewall portion covering therewith the side surface of the interconnect body portion and a bottom wall portion covering therewith the bottom surface of the interconnect body portion. The thickness of the sidewall portion is made greater than that of the bottom wall portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.