Photodetector and display device provided with the same
US8227887B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2008 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Sep 13, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a photodetector capable of suppressing variations in the output characteristics among photodiodes, and a display device provided with the photodetector. A display device in use has an active matrix substrate (20) including a transparency base substrate (2), a plurality of active elements and a photodetector. The photodetector includes a light-shielding layer (3) provided on one main surface of the base substrate (2), a photodiode (1) arranged on an upper layer of the light-shielding layer (3), and an electrode (12) arranged in the vicinity of the photodiode (1) on the upper layer of the light-shielding layer (3). The photodiode (1) includes a silicon layer (11), and the silicon layer (11) is insulated electrically from the light-shielding layer (3). The electrode (12) is insulated electrically from the light-shielding layer (3) and the silicon layer (11). The light-shielding layer (3) is formed so that a part thereof is overlapped with the entire silicon layer (11) and the other part is overlapped with the electrode (12) in the thickness direction of the base substrate (2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.