Semiconductor component with countersignal circuit for preventing crosstalk between electronic assemblies

US8227888B2 · kind B2 · utility

Assignee

• IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS · DE

Inventors

• Gunther Lippert · Frankfurt, DE
• Gerald Lippert · Frankfurt (Oder), DE

Key dates

• Filing date: Apr 8, 2005
• Grant date: Jul 24, 2012
• Expiry date: Oct 15, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor component including a first integrated circuit in a substrate which is adapted to produce electrical signals with a high-frequency signal component, wherein the substrate is such that the high-frequency signal component can propagate on a substrate surface and/or in the substrate interior, a second integrated circuit in the same substrate which is such that its function can be compromised by high-frequency signals, and a countersignal circuit in the same substrate which is adapted to deliver an electrical countersignal which at least at a selected location of the substrate surface and/or the substrate interior attenuates or eliminates the high-frequency electrical signal component emanating from the first integrated circuit, wherein the countersignal circuit includes a receiver which is adapted to produce an electrical signal dependent on the instantaneous field strength of the high-frequency signal component, and a shielding transistor provided in the substrate and having a control electrode and a first field electrode and a second field electrode, whose control electrode is connected on the input side to the receiver and whose first and second field electrodes are…