Semiconductor device with Cu metal-base and manufacturing method thereof
US8227912B2 · kind B2 · utility
7Cited by
5References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 10, 2004 |
| Grant date | Jul 24, 2012 |
| Priority date | — |
| Expiry date | Feb 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/053
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
As a substrate for a semiconductor device, a metal substrate is used, and the metal substrate is composed of a metal base body made of a first metal and a connecting metal layer made of a second metal for covering the metal base body. The substrate has a structure wherein a diffusion preventing layer for preventing diffusion of the first metal is provided on the connecting metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.