Patent · US Active

Photo-stimulated low electron temperature high current diamond film field emission cathode

US8227985B2 · kind B2 · utility

2Cited by

6References

9Claims

0Family size

Assignee

LOS ALAMOS NATIONAL SECURITY, LLC · US

Inventors

Roger Philips Shurter · Los Alamos, US
David J. Devlin · Los Alamos, US
Nathan Moody · San Francisco, US
Jose Martin Taccetti · Greenbelt, US
Steven J. Russell · Coventry, GB

Key dates

Filing date	Aug 5, 2011
Grant date	Jul 24, 2012
Priority date	—
Expiry date	Aug 5, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2201/30469
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.