Method for controlled formation of the resistive switching material in a resistive switching device and device obtained thereof
US8232174B2 · kind B2 · utility
1Cited by
1References
17Claims
0Family size
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Key dates
| Filing date | Aug 31, 2007 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Oct 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/611
Abstract
The present disclosure provides a method for controlled formation of the resistive switching layer in a resistive switching device. The method comprises providing a substrate (2) comprising the bottom electrode (10), providing on the substrate a dielectric layer (4) comprising a recess (7) containing the metal for forming the resistive layer (11), providing on the substrate a dielectric layer (5) comprising an opening (8) exposing the metal of the recess, and forming the resistive layer in the recess and in the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.