Flexible lateral pin diodes and three-dimensional arrays and imaging devices made therefrom
US8232617B2 · kind B2 · utility
9Cited by
9References
13Claims
0Family size
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Key dates
| Filing date | Jun 4, 2009 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Mar 11, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.