Semiconductor article having a through silicon via and guard ring
US8232648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2010 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Oct 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor article which includes a semiconductor base portion, a back end of the line (BEOL) wiring portion on the semiconductor base portion, a through silicon via and a guard ring. The semiconductor base portion is made of a semiconductor material. The BEOL wiring portion includes a plurality of wiring layers having metallic wiring and insulating material. The BEOL wiring portion does not include a semiconductor material. The through silicon via provides a conductive path through the BEOL wiring portion and the semiconductor base portion. The guard ring surrounds the through silicon via in the BEOL wiring portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.