Patent · US Active

Light emitting devices including semiconductor nanocrystals

US8232722B2 · kind B2 · utility

16Cited by

10References

57Claims

0Family size

Assignee

Massachusetts Institute of Technology · US

Inventors

Moungi G. Bawendi · Cambridge, US
Vladimir Bulovic · Lexington, US
Seth Coe-Sullivan · Redondo Beach, US
Jean-Michel Caruge · Cambridge, US
Jonathan S. Steckel · Saratoga, US
Alexi C. Arango · Somerville, US
Jonathan E. Halpert · Falls Church, US

Key dates

Filing date	Feb 15, 2006
Grant date	Jul 31, 2012
Priority date	—
Expiry date	Nov 7, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10K59/805
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.