High energy density inductor
US8232855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2008 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Jul 17, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4902
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate layer for use in an inductor is provided. The substrate layer comprises traces disposed on a first side of the substrate layer, wherein the traces are configured to facilitate conduction of current in a winding of the inductor, a sealing layer disposed on a second side of the substrate layer, wherein the sealing layer is configured to provide a sealing border for an electrically isolated cooling channel and an interconnect foil disposed on the second side of the substrate layer, wherein the interconnect foil is configured to facilitate operationally coupling the substrate layer to a second substrate layer. Further, the first substrate layer and the second substrate layer may be operationally coupled to form a winding for use in an inductor with an electrically isolated cooling channel in between.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.