ESD protection circuit for low voltages

US8233252B2 · kind B2 · utility

Assignee

• Atmel Corporation · US

Inventors

• Peter Grombach · Heilbronn, DE
• Manfred Klaussner · Heilbronn, DE

Key dates

• Filing date: Mar 16, 2006
• Grant date: Jul 31, 2012
• Expiry date: Jan 13, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/811
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

An ESD protection circuit is provided having a first field-effect transistor, which has a first drain terminal, a first source terminal and a first control terminal, and having an input network which, in the event that a first voltage present between the first drain terminal and the first source terminal crosses a threshold value, alters a second voltage that appears between the first control terminal and the first source terminal. The input network contains a second field-effect transistor, complementary to the first field-effect transistor, having a second drain terminal, a second source terminal and a second control terminal, wherein the first drain terminal is connected to the second source terminal and, through a first resistance, to the second control terminal, and the second drain terminal is connected to the first control terminal and, through a second resistance, to the first source terminal.