Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials
US8233314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2010 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | May 4, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49764
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus and methods are disclosed that enable writing data on, and reading data of, multi-state elements having greater than two states. The elements may be made of magnetoplastic and/or magnetoelastic materials, including, for example, magnetic shape-memory alloy or other materials that couple magnetic and crystallographic states. The writing process is preferably conducted through the application of a magnetic field and/or a mechanical action. The reading process is preferably conducted through atomic-force microscopy, magnetic-force microscopy, spin-polarized electrons, magneto-optical Kerr effect, optical interferometry or other methods, or other methods/effects. The multifunctionality (crystallographic, magnetic, and shape states each representing a functionality) of the multi-state elements allows for simultaneous operations including read&write, sense&indicate, and sense&control. Embodiments of the invention may be used, for example, for storing, modifying, and accessing data for device, sensor, actuator, logic and memory applications. Embodiments may be particularly effective for non-volatile memory or other read&write, sense&indicate, and/or sense&control functions in co…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.