Broad-area edge-emitting semiconductor laser with limited thermal contact
US8233513B1 · kind B1 · utility
7Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Apr 22, 2011 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Apr 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2036
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A diode-laser having an elongated diode-laser emitter is mounted on a relatively massive heat-sink. Two parallel grooves are machined into the heat-sink to leave a relatively narrow elongated ridge of the heat-sink between the grooves. The ridge has a width about equal to or narrower that the width of the emitter. The diode-laser is mounted on the heat-sink such that thermal communication between the emitter and heat-sink is essentially limited to thermal communication with the ridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.