Semiconductor laser device
US8233514B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 1, 2011 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Dec 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0283
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser according to the present invention comprises a λ/2 dielectric film (λ:in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AlN) in contact with a facet of a resonator; and a first dielectric double layered film disposed on the dielectric film, which includes a first layer of a-Si and a second layer of a material having a refractive index lower than that of a-Si. The first layer has a thickness ¼ of an in-medium wavelength of a-Si, and the second layer has a thickness ¼ of an in-medium wavelength of the second layer. Therefore, it is possible to firmly stack the first dielectric double layered film and form a high reflectance film with high yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.