Test pattern for contour calibration in OPC model build
US8234601B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2010 |
| Grant date | Jul 31, 2012 |
| Priority date | — |
| Expiry date | Dec 15, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70683
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of calibrating a lithographic process model is provided. The method includes providing a test pattern that includes a plurality of shapes; transferring the test pattern onto a photo-mask forming a resist image of the test pattern using the photo-mask; collecting model calibration data from the resist image; and calibrating the lithographic process model using the model calibration data, wherein the plurality of shapes of the test pattern have at least a first shape and a second shape, and distances from an edge of the first shape to an edge of the second shape over a range thereof, when being measured parallel to each other, differ from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.